SID 07, p. 1604 with permission by The Society for Information DisplayFigure 22.8 Silk screen printingFigure 22.9 Wetting angle α of a liquidFigure 22.10 Process chamber of plasma cleaningFigure 22.11 UV–ozone cleaning chamberFigure 22.12 Free surface energy γs of ITO versus duration of UV–ozone cleaningFigure 22.13 Change of free surface energy of ITO during storage time. This figure was reproduced from Souk, J. H. et al., SID 08, p. 431 with permission by The Society for Information DisplayFigure 22.14 The ink-jet print bounded by a wall of a black matrix (a) before and (b) after baking. This figure was reproduced from Liu, K. H. et al., SID 07, p. 1607 with permission by The Society for Information DisplayFigure 22.15 Interlaced ink-jet heads for uniform printing on a larger areaFigure 22.16 Transmittance–voltage curve of a vacuum filled and of a flexographically printed nematic LC. This figure was reproduced from Kawashima, N. et al., SID 09, p. 25 with permission by The Society for Information DisplayFigure 22.17 Cross-section of an OTFT with a small molecule organic semiconductor. This figure was reproduced from Kawashima, N. et al., SID 09, p. 26 with permission by The Society for Information DisplayFigure 22.18 Id–VG characteristic of the OTFT in Figure 22.16. This figure was reproduced from Yase, K. et al., SID 09, p. 199 with permission by The Society for Information DisplayFigure 22.19 Two-step micro contact printing for OTFTs. This figure was reproduced from Yase, K. et al., SID 09, p. 199 with permission by The Society for Information DisplayFigure 22.20 Cross-section of an OTFT with a polymer based organic semiconductor. This figure was reproduced from Yase, K. et al., SID 09, p. 200 with permission by The Society for Information DisplayFigure 22.21 Id–VG characteristics of the OTFT in Figure 22.19Figure 22.22 Cell building by lamination of plastic substrates22 Chapter 23Figure 23.1 (a) Cross-sectional transmission electron microscope surface of crystalline IGZO; (b) diagram of the crystalline layers. This figure was reproduced from Matsuo, T. et al. (2014), SID Symp. Digest Tech. Papers 45, pp. 83–86 with permission by The Society for Information DisplayFigure 23.2 Band gap diagram of c-axis aligned IGZO (CAAC-IGZO). This figure was reproduced from Yamazaki and Tsutsui (2017), p.96, fig 2.87, with permission by John Wiley and Sons Inc.Figure 23.3 Drain current (ID)–gate voltage (VG) input of a-Si, oxide semiconductors and LT PS. This figure was reproduced from Matsuo, T. et al. (2014), SID Symp. Digest Tech. Papers 45, pp. 83–86 with permission by The Society for Information DisplayFigure 23.4 Transmittance of an IGZO layer. This figure was reproduced from Yamashita, A. et al. (2015), JSID, 22, pp. 216–227 with permission by The Society for Information Display.Figure 23.5 Crystalline (a, c) and amorphous (b, d) atomic structures of IGZO. This figure was reproduced from Kamiya, T., et al. (2013), SID 44, pp. 11–13 with permission by The Society for Information DisplayFigure 23.6 Saturation and linear mobility in an oxide TFTFigure 23.7 Progress flow and structure of bottom-gate, bottom-contact TFT. This figure was reproduced from Osada, T., et al. (2009), SID 40, pp. 184–187 with permission by The Society for Information DisplayFigure 23.8 ID–VG curve of an amorphous In-Ga-Zn-oxide TFT. This figure was reproduced from Osada, T., et al. (2009), SID 40, pp. 184–187 with permission by The Society for Information DisplayFigure 23.9 Bottom-gate etch-stop transistor. This figure was reproduced from Yamazaki and Tsutsui (2017), p.5, fig 2.3a, with permission by John Wiley and Sons Inc.Figure 23.10 Schematic diagram of a three-layer structure of ITZO-TFTs. This figure was reproduced from Tsai M., et al. (2015), SID 46, with permission by The Society for Information DisplayFigure 23.11 (a, b) ID = f(VG) and mobility and sub-threshold voltage swing (SS) for a single-layer IGZO-TFT (a) and a single-layer ITZO-TFT (b). This figure was reproduced from Tsai M., et al. (2015), SID 46, with permission by The Society for Information DisplayFigure 23.12 ID = f(VG) and mobilities and SS values for the two single layers and the triple layer, the triple-layer device working in enhancement mode. This figure was reproduced from Tsai M., et al. (2015), SID 46, with permission by The Society for Information DisplayFigure 23.13 View of a display with split source, drain and semiconductor electrodes and cross-section of bottom-gate etch-stop TFT. This figure was reproduced from Lee, S. et al. (2018) JSID, 26, pp. 164–168 with permission by The Society for Information DisplayFigure 23.14 (a, b) ID = f(VG) for a conventional and a split TFT (a) and field effect mobility for a conventional and a split TFT (b). This figure was reproduced from Lee, S. et al. (2018) JSID, 26, pp. 164–168 with permission by The Society for Information DisplayFigure 23.15 (a, b) PBTS for ID = f(VG) for a conventional (a) and a split (b) electrode TFT with stress times of up to 3.6 ks. This figure was reproduced from Lee, S. et al. (2018) JSID, 26, pp. 164–168 with permission by The Society for Information DisplayFigure 23.16 Cross-section of dual-gate back-channel etched IGZTO-TFT. This figure was reproduced from Nakata, M., et al. (2019) SID 50: 1226–1229 with permission by The Society for Information DisplayFigure 23.17 The various categories of crystalline layers. This figure was reproduced from Yamashita, A. et al. (2015), SID Symp. Digest Tech. Papers 45, pp. 263–266 with permission by The Society for Information DisplayFigure 23.18 Mobility as a function of atomic percent of N concentration. Lee, E. et al. (2015), SID, p. 681 266 with permission by The Society for Information DisplayFigure 23.19 Bottom-gate top conductor TFT with capacitor. This figure was reproduced from Yamazaki, S. (2014), SID, 45, p. 9 with permission by The Society for Information DisplayFigure 23.20 Hall mobility of nIGZO and CAAC-IGZO. This figure was reproduced from Ishihara, N. et al. (2016), SID Symp. Digest Tech. Papers, 47, p. 816 with permission by The Society for Information DisplayFigure 23.21 Cross-section of the layers of a printed TFT. S, semiconductor. This figure was reproduced from Chena, Y. et al. (2016), p. 322, SID Symp. Digest Tech. Papers, 47 with permission by The Society for Information DisplayFigure 23.22 ID = f(VG) of an all-printed oxide TFT. This figure was reproduced from Matsumoto, S. et al. (2015), SID 46, p. 300 with permission by The Society for Information DisplayFigure 23.23 (a, b) Structures for a printed TFT before (a) and after (b) irradiation for conductivity enhancement. This figure was reproduced from Bermundo, J. et al. (2019), SID 50, pp. 422–425 with permission by The Society for Information DisplayFigure 23.24 ID = f(VG) after UV and krypton fluoride (KrF) excimer laser irradiation of all-printed layers. This figure was reproduced from Bermundo, J. et al. (2019), SID 50, pp. 422–425 with permission by The Society for Information DisplayFigure 23.25 (a, b) Layers of a single-gate TFT under tensile stress (a) and under compressive stress (b). This figure was reproduced from Billah, M. et al. (2016), SID 47, p. 1155 with permission by The Society for Information DisplayFigure 23.26 (a, b) ID = f(VG) for a single-gate TFT (a) and a dual-gate TFT (b) under tensile and compressive stress. This figure was reproduced from Billah, M. et al. (2016), SID 47, p. 1155 with permission by The Society for Information DisplayFigure 23.27 ID = f(VG) under NBIS for a single-gate (a) and a dual-gate TFT (b) and for bending stress for a single-gate (c) and a dual-gate TFT (d). This figure was reproduced from Billah, M.M. and Jang, J. (2019) SID 50, pp. 210–213 with permission by The Society for Information DisplayFigure 23.28 A Vth in for the time under NBIS (a) and under tensile strain (b) for single- and dual-gate driving and the mobility under NBIS (c) and tensile stress (d) for single- and dual-gate driving. This figure was reproduced from Billah, M.M. and Jang, J. (2019) SID 50, pp. 210–213 with permission by The Society for Information DisplayFigure 23.29 Wavelength of the UWB-TFT and the a-IGZO-TFT. This figure was reproduced from Kim, J. et al. (2016), SID Symp. Digest Tech. Papers, 47 with permission by The Society for Information DisplayFigure 23.30 (a, b) NBIS stability under white LED illumination for the a-IGZO TFT (a) and the UWB-aOS TFT (b). This figure was reproduced from Kim, J. et al. (2016), SID Symp. Digest Tech. Papers, 47 with permission by The Society for Information DisplayFigure 23.31 (a, b) Stability under fluorescent lamp illumination for a-IGZO TFT (a) and UWB-aOS TFT (b). This figure was reproduced from Kim, J. et al. (2016), SID Symp. Digest Tech. Papers, 47 with permission by The Society for
