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DEFECTS IN FUNCTIONAL MATERIALS
Editors
Francis Chi-Chung Ling
University of Hong Kong, Hong Kong
Shengqiang Zhou
Institute of Ion Beam Physics and Materials Research, Germany
Andrej Kuznetsov
University of Oslo, Norway
Published by
World Scientific Publishing Co. Pte. Ltd.
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DEFECTS IN FUNCTIONAL MATERIALS
Copyright © 2021 by World Scientific Publishing Co. Pte. Ltd.
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Preface
Functional materials cover a wide range of materials — such as metals, semiconductors, polymers, oxides, etc. — demonstrating suitable electrical, optical and magnetic properties to be used for different applications. Indeed, such materials exhibit a number of physical phenomena including ferroelectricity, piezoelectricity, superconductivity, magnetism, dielectric and optoelectronic properties, etc. As a result, functional materials find a variety of applications in sensors, lasers, displays, printable electronics, solid-state lighting, energy harvesting and storage, catalysis, etc. The research on functional materials has attracted much of attention in recent years, and its advancement nutrifies the development in such cross-disciplinary branches as life-science, energy, and information technologies.
Defects play a crucial role in determining the materials’ electrical, optical and magnetic properties. Defects may be introduced intentionally by additional processing or be present in materials upon the fabrication. Defects could be in forms of the lattice imperfections or impurities, simple point defects or defect complexes. In any case, due to the periodicity breaking, the electronic states associated with such defects may occur in otherwise forbidden energy gap, with the corresponding levels lying shallow or deep relative to the conduction/valence band edges. For example, in a semiconductor, the carrier concentration can be elevated by introducing the shallow level defects or compensated by the deep level defects. Another charismatic example is the carrier lifetime — a critical parameter in a number of semiconductor technologies — which may be tuned in a wide range by incorporating or avoiding appropriate defects. Accordingly, defects affect materials’ optical properties, as may be revealed from the optical absorption or luminescence spectra. Notably, some of the magnetic phenomena in wide band gap semiconductors may be associated with the presence of defects too. Overall, selecting materials for each specific function, requires an accurate control over the defects’ distribution in the materials. Thus, defects characterization and tuning are of paramount importance for the applications of functional materials. However, in spite of the importance of these issues, the understanding of defects in many materials is far from being complete, not least accounting for that in new materials and for the new detect functionalization concepts.
This book aims to highlight recent progress in understanding how defects affect electrical, optical and magnetic properties in functional materials, already resulted (or potentially resulting) in novel applications in the fields of quantum computing, optoelectronics, photovoltaic, magnetism, etc. Specifically, the first two chapters review some of the conventional and novel methodologies to study defects in functional materials, e.g. in 2D-materials using transmission electron microscopy (TEM) and scanning tunneling microscopy (STM). This part is followed by seven topical review chapters on: defects in perovskites, specifically emphasizing the impacts on the transport and optical properties critical for solar cell and light emitting diode applications; color center defects in wide band gap semiconductors and their applications in quantum technology; density functional theory study of native defects, impurities and defect complexes in InN — a material for high speed electronic applications; dopant- and impurity-induced defects and their impacts on the electrical properties of ZnO a promising material for applications in optoelectronics, spintronic etc.; ferromagnetism in ordered B2 alloys induced by antisite defects; magnetism in SiC induced by defects; defect associated ferromagnetism in ZnO based materials.
We trust this book can be of use for a wide and cross-disciplinary research community dealing with functional materials, as well as for the students in the field to use this text for studies, referencing, and inspirations.
Editors
Francis Chi-Chung Ling
The University of Hong Kong
Shengqiang Zhou
Helmholtz-Zentrum Dresden-Rossendorf
Andrej Kuznetsov
University of Oslo
September 2019
Contents
Preface
