Phosphors for Radiation Detectors. Группа авторов

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of 𝑛 in Poisson distribution is called the Fano factor (F). By using the Fano factor, the limit of the energy resolution of actual detectors is expressed as

      (1.18)equation

      In semiconductor, gas, and scintillation detectors, F is ~0.1, 0.1–0.4, and 1, respectively. Therefore, semiconductor detectors such as Si, Ge, and CdTe are known to have a superior energy resolution compared to scintillation detectors, and the best energy resolution so far is ~2% at 662 keV [60, 61]. In practical detectors, energy resolution is not only affected by statistics but also by non‐uniformity of the scintillator. Especially in luminescence center doped scintillators, because we generally use bulky larger material to interact with ionizing radiations effectively, non‐uniform distribution of dopant ions cannot be avoided. The non‐uniform distribution causes differences of light output at each point on the scintillator, and in such a case, the photoabsorption peak or some other features caused by ionizing radiation become, for example, a superposition of multiple Gaussian. Eventually, the shape of the peak in the pulse height spectrum becomes broad, and the energy resolution becomes worse. Such a non‐uniformity is also observed in photodetectors, and the energy resolution observed in practical detectors depends on the non‐uniform response of scintillators and photodetectors.

      (1.19)equation

      where δsc, δcir, and δst represent the intrinsic energy resolution, resolution due to circuit noise, and resolution expected by Poisson statistics, respectively. In pulse height spectrum, we observe ΔE/E directly, and we can estimate δst by the number of scintillation photons and the quantum efficiency of the photodetector. The circuit noise δcir can be directly estimated by the injection of a test pulse into the electrical circuit. Thus, we can calculate δsc by the subtraction of δst and δcir from ΔE/E. Under most experimental conditions, estimation must consider a contribution not only by the scintillator but also by the photodetector, and the simplest measurement can be possible by Si‐PD because it has no internal gain. When we measured and calculate the intrinsic energy resolution, that at 662 keV of Tl‐doped NaI was 2.5% [64], Tl‐doped CsI was 5% [65], Ce‐doped LaBr3 was 2.2% [66], Ce‐doped LuAG was 4.5% [66], and Ce‐doped LSO was 7.7% [66]. At present, the remaining problem is whether the intrinsic energy resolution we are observing is a fundamental limit or not, and whether the intrinsic energy resolution is the physical property of each material or not (detector property). The detailed explanations on energy resolution and intrinsic energy resolution are described in Chapter 12.

Graphs depict (top) the relationship between the scintillation decay time (nanoseconds) and emission wavelength (nanometers) and (bottom) relationship between gamma-ray energy and photo absorption peak channel.

      

      1.3.4 Timing Properties

      The number of the decrease of excited states –ΔNnr is expressed as

      (1.22)equation

      Thus, we can obtain

      (1.23)equation

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