Introduction To Modern Planar Transmission Lines. Anand K. Verma
Чтение книги онлайн.
Читать онлайн книгу Introduction To Modern Planar Transmission Lines - Anand K. Verma страница 74
4.2.6 Static Conductivity of Materials
Figure (4.6a) shows a cylindrical section of the lossy material of conductivity (σ), i.e. resistivity ρ = 1/σ. Its cross‐sectional area and length are A and h, respectively. The lossy material can be modeled as a resistor R, also shown in Fig. (4.6a). The conduction current density Jc flowing through the conductor, due to the free mobile charges, is Jc = Ic/A, where conduction current is Ic = V/R. The electric field intensity in the material is
The above expression (4.2.19b) is Ohm's law for a lossy medium. The following expression of the equivalent resistance of a lossy material, in terms of its resistivity, follows from the above equation (4.2.19c):
(4.2.20)
In general, the Ohm’s law for the anisotropic medium is written in the vector form as
Figure (4.6a) considers h = Δx length of a cylindrical section of conducting material with a cross‐sectional area ΔA. The free charges move in the direction x with a velocity vx on the application of electric field intensity Ex. The conduction current in the x‐direction is the rate of flow of total charge ΔQe contained in a volume, ΔV = ΔA × Δx.
Figure 4.6 Circuit model, parameters of a dielectric medium.
(4.2.21)
In the limiting case,
(4.2.22)
In a material, the charge movement is random due to the scattering and so forth. However, an average motion is assumed, giving the drift of charges in the x‐direction with a drift velocity
where constant μm is called the mobility of a charge. It is noted that μ is also used as a symbol for permeability. On comparing equations (4.2.19b) and (4.2.23b), the following expression for conductivity is obtained:
(4.2.24)
If N is the number of free charges per unit volume, with charge q on each carrier, the charge density is ρe = Nq. The equation (4.2.24) of the conductivity is changed to
(4.2.25)
In the case of a conductor, the charge carrier is electron, i.e. q = qe (the electron charge) and μ = μem (electron mobility). However, for a semiconductor, its conductivity σs is due to both electrons and holes leading to the following expression:
(4.2.26)
where Ne and Nh are numbers of electrons and holes per unit volume. The charges on electron and holes are equal qe = qh = e = 1.6 × 10−19 Coulombs. The electron and hole mobilities, in a semiconductor, are
4.3 Circuit Model of Medium
The circuit model helps to understand the electrical property of a medium. It is further useful for simulating the electrical responses of a medium. The electrical property of a dielectric medium is expressed through relative permittivity that shows the electric energy storage ability of the medium. The capacitor also stores electric energy. Therefore, a dielectric medium is modeled as a capacitor. The loss in a medium is due to the dissipation of energy that is modeled as a resistor. Similarly, the permeability of a medium, such as an inductor, shows its ability to store magnetic energy. Therefore, the permeability of a medium is modeled as an inductor [B.10–B.12].
4.3.1 RC Circuit Model of Lossy Dielectric Medium
Figure (4.6b) shows a parallel‐plate capacitor, containing a lossy dielectric medium with complex relative permittivity