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Federal Communications Commission
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FDM
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fused‐deposition modeling
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FE
|
front end
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FF
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far‐field
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FMCW
|
frequency modulated continuous wave
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FoM
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figure of merit
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FO PoP
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fan‐out package‐on‐package
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FO‐WLP
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fan‐out wafer‐level packaging
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FPGA
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field‐programmable gate array
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FR4
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flame resistant 4
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FSS
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frequency selective surface
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GaAs
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gallium arsenide
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GaN
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gallium nitride
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Gb/s
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gigabit per second
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GPU
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graphics processing unit
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GSG
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ground‐signal‐ground
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GSGSG
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ground‐signal‐ground‐signal‐ground
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GSM
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global system for mobile communications
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HAST
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highly accelerated stress test
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HBM
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high bandwidth memory
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HDI
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high‐density integration
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HDI
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high‐density interconnect
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HFSS
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high‐frequency structure simulator
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HPBW
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half‐power beam width
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HTCC
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high‐temperature co‐fired ceramics
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IC
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integrated circuit
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IEEE
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Institute of Electrical and Electronics Engineers
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IF
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intermediate frequency
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InFO_PoP
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integrated fan out package on package
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I/O
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input/output
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IoT
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Internet of Things
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ISM
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industrial, scientific and medical
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ISSCC
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International Solid‐State Circuits Conference
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JPL
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jet propulsion laboratory
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LCD
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liquid crystal display
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LCP
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liquid crystal polymer
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LGA
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land grid array
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LHCP
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left‐hand circular polarization
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LNA
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low‐noise amplifier
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LP
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linearly polarized
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LTCC
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low‐temperature co‐fired ceramic
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MACM
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multiple amplitude component method
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MAPCM
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multiple amplitude phase component method
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MCM
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multi‐chip module
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MEMS
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micro‐electromechanical systems
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MIM
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metal–insulator–metal
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MIMO
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multiple input multiple output
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MMIC
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monolithic microwave integrated circuit
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MMWAC
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mmWave anechoic chamber
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mmWave
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millimeter‐wave
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mSAP
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modified semi‐additive process
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MUF
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molded underfill
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NF
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near‐field
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NF
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noise figure
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NIST
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National Institute of Standards and Technology
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NRE
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non‐recurring engineering
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NRW
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Nicholson–Ross–Weir
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OTA
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over‐the‐air
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PAE
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power‐added efficiency
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PAM
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phase amplitude method
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PBO
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polybenzoxazoles
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PCB
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printed circuit board
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PEC
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perfect electric conductor
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PER
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packet error rate
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PET
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polyethylene terephthalate
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pHEMT
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pseudomorphic high electron mobility transistor
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PI
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polyimide
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PLA
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polylactic acid
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PLL
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